PART |
Description |
Maker |
2N6796LCC4 |
N-Channel Power MOSFET(Vdss00VId(cont).4A,Rds(on).18ΩN沟道功率型MOS场效应管(Vdss00VId(cont).4A,Rds(on).18Ω
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SEME-LAB[Seme LAB]
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IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)) N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)4A条的Rds(on):0.070Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00V的,身份证(续)4A条的Rds(on.070Ω))
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SEMELAB LTD Electronic Theatre Controls, Inc. TE Connectivity, Ltd. Semelab(Magnatec) SEME-LAB[Seme LAB]
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SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
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Semelab(Magnatec) TT electronics Semelab Limited Seme LAB
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IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)7.4A,的Rds(on):0.100Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)7.4A时,RDS(对):0.100Ω))
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Electronic Theatre Controls, Inc. SEME-LAB Seme LAB
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19003-0048 19003-0057 19003-0053 19003-0056 19003- |
.250 X.032 FML FIQD EXP CONT.(BB-2206XC) 2 mm2, PUSH-ON TERMINAL .187X.032 FEMALE AQUA FIQD CONT BB-2208C 2 mm2, PUSH-ON TERMINAL .187X.020 FEMALE FIQD EXPANDED (BB-2207X 2 mm2, PUSH-ON TERMINAL .187 X .032 FEMALE FIQD (BB-2208) 2 mm2, PUSH-ON TERMINAL .250 X.032 FML FIQD EXP TAPED(BB-2206XT) 2 mm2, PUSH-ON TERMINAL 190030058 2 mm2, PUSH-ON TERMINAL .205 X .020 BLUE FIQD CONT BB-2215C 2 mm2, PUSH-ON TERMINAL .250 X.032 FML FIQD EXP TAPED(AA-2201XT) 0.8 mm2, PUSH-ON TERMINAL 190030060 2 mm2, PUSH-ON TERMINAL .187 X .020 FEMALE FIQD CONT. (AA-2202C) 0.8 mm2, PUSH-ON TERMINAL .250 X .032 FEMALE FIQD CON 2 mm2, PUSH-ON TERMINAL
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Molex, Inc. TE Connectivity, Ltd. MOLEX INC
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IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续).8A时,RDS(上):0.46Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续).8A时,RDS(对):0.46Ω)) N-Channel N沟道
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NXP Semiconductors N.V. TT electronics Semelab Limited Seme LAB
|
IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
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APT5024SLL APT5024BLL |
Volts:500V RDS(ON):0.24Ohms ID(cont:)22Amps|MOSFETs 电压00V电压的RDS(ON):0.24Ohms编号(续:)22安培| MOSFET
|
Advanced Power Technology, Ltd.
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APT50M60JVR |
Volts:500V RDS(ON)0.06Ohms ID(cont):63Amps|MOSFETs 电压00V电压的RDS(ON.06Ohms身份证(续)63安培| MOSFET
|
Yageo, Corp.
|
APT13GP120K |
Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family 电压200伏室的Vceon):3.6V的身份证(续):一三安培|超快IGBT的家
|
Commonwealth Industrial, Corp.
|
APT5523BFLL APT5523SFLL |
Volts:550V RDS(ON)0.23Ohms ID(cont):24Amps|FREDFETs ( fast body diode) 电压50V的RDS(ON.23Ohms身份证(续):二十四安培| FREDFETs(快速体二极管)
|
Microsemi, Corp.
|
2-212565-3 |
Subminiature D Pin/Socket Connectors for MIL-C-24308 and MIL-C-39029; AMPLI,PIN CONT,SZ 20,AU PLTD ( AMP )
|
Tyco Electronics
|